Computational & Technology Resources
an online resource for computational,
engineering & technology publications
Civil-Comp Proceedings
ISSN 1759-3433
CCP: 102
PROCEEDINGS OF THE FOURTEENTH INTERNATIONAL CONFERENCE ON CIVIL, STRUCTURAL AND ENVIRONMENTAL ENGINEERING COMPUTING
Edited by: B.H.V. Topping and P. Iványi
Paper 203

Parallel Meshless Simulation of a P-N Junction

G. Kosec and R. Trobec

Department of Communication Systems
Jošef Stefan Institute, Ljubljana, Slovenia

Full Bibliographic Reference for this paper
G. Kosec, R. Trobec, "Parallel Meshless Simulation of a P-N Junction", in B.H.V. Topping, P. Iványi, (Editors), "Proceedings of the Fourteenth International Conference on Civil, Structural and Environmental Engineering Computing", Civil-Comp Press, Stirlingshire, UK, Paper 203, 2013. doi:10.4203/ccp.102.203
Keywords: semiconductor, P-N junction, drift diffusion model, local numerical method, meshless, parallel, OpenMP.

Summary
A parallel numerical solution of the drift-diffusion model for simulation of semiconductor devices based on the local meshless method is demonstrated in this paper. The problem is usually discretized and solved through nonlinear solvers with an iterative approach. Numerical difficulties inherited from convection-dominated processes are also associated with high gradients and oscillations in the solution. The difficulties can be alleviated by artificial dissipation schemes and by other stabilization approaches that require complex computation to improve solution convergence. We propose a simple numerical approach with a local coupling and without special treatments of nonlinearities. The spatial discretization is performed through the local meshless method to allow more freedom in geometric shapes. We demonstrate that the proposed approach is simple to implement and suitable for parallel implementation.

purchase the full-text of this paper (price £20)

go to the previous paper
go to the next paper
return to the table of contents
return to the book description